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UPD75P316AGF-3B9的技术资料
UPD75P316AGF-3B9的技术资料
来源:
深圳市振升电子有限公司
发布日期:2009/4/16 15:43:22
UPD75P316AGF-3B9的产品特征:
• Compatible (excluding mask option) with the mask products
• Memory capacity
• Program memory (PROM): 16256 × 8 bits
• Data memory (RAM): 1024 × 4 bits
• Low-voltage operation capability: 2.7 to 6.0 V
UPD75P316AGF-3B9的技术参数:
UPD75P316AGF-3B9的产品描述:
• Compatible (excluding mask option) with the mask products
• Memory capacity
• Program memory (PROM): 16256 × 8 bits
• Data memory (RAM): 1024 × 4 bits
• Low-voltage operation capability: 2.7 to 6.0 V
UPD75P316AGF-3B9的技术参数:
PARAMETER | SYMBOL | TEST CONDITIONS | RATING | UNIT | |
Power supply voltage | VDD |
|
–0.3 to +7.0 | V | |
VPP |
|
–0.3 to +13.5 | V | ||
Input voltage | VI1 | Except ports 4, 5 | –0.3 to VDD+0.3 | V | |
VI2 | Ports 4, 5O | pen-drain | –0.3 to +11 | V | |
Output voltage | VO |
|
–0.3 to VDD+0.3 | V | |
Output current high | IOH | 1 pin | -15 | mA | |
All pins | -30 | mA | |||
Output current low | IOL* | 1 pin | Peak value | 30 | mA |
Effective value | |||||
Total of ports 0, 2, 3, 5 | Peak value | 15 | mA | ||
Effective value | |||||
Total of ports 4, 6, 7 | Peak value | 100 | mA | ||
Effective value | |||||
60 | mA | ||||
100 | mA | ||||
60 | mA | ||||
Operating temperature | Topt |
|
–40 to +85 | °C | |
Storage temperature | Tstg |
|
–65 to +150 | °C |
UPD75P316AGF-3B9的产品描述:
The µPD75P316A is a product of the µPD75316 with on-chip ROM having been replaced with the one-time PROM or EPROM. It is most suitable for test production during system development and for production in small amounts since it can operate under the same supply voltage as mask products.
The one-time PROM product is capable of writing only once and is effective for production of many kinds of sets in small quantities and early startup. The EPROM product allows program writing and rewriting, and is therefore suitable for system evaluation. The on-chip RAM has twice the capacity of the µ PD75316/75P316, enabling large amounts of data to be processed.