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UPD75P316AGF-3B9的技术资料

来源: 深圳市振升电子有限公司 发布日期:2009/4/16 15:43:22
UPD75P316AGF-3B9的产品特征:
• Compatible (excluding mask option) with the mask products
• Memory capacity
• Program memory (PROM): 16256 × 8 bits
• Data memory (RAM): 1024 × 4 bits
• Low-voltage operation capability: 2.7 to 6.0 V


UPD75P316AGF-3B9的技术参数:
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Power supply voltage VDD

 

–0.3 to +7.0 V
VPP

 

–0.3 to +13.5 V
Input voltage VI1 Except ports 4, 5 –0.3 to VDD+0.3 V
VI2 Ports 4, 5O pen-drain –0.3 to +11 V
Output voltage VO

 

–0.3 to VDD+0.3 V
Output current high IOH 1 pin -15 mA
All pins -30 mA
Output current low IOL* 1 pin Peak value 30 mA
Effective value
Total of ports 0, 2, 3, 5 Peak value 15 mA
Effective value
Total of ports 4, 6, 7 Peak value 100 mA
Effective value
60 mA
100 mA
60 mA
Operating temperature Topt

 

–40 to +85 °C
Storage temperature Tstg

 

–65 to +150 °C


UPD75P316AGF-3B9的产品描述:

The µPD75P316A is a product of the µPD75316 with on-chip ROM having been replaced with the one-time PROM or EPROM. It is most suitable for test production during system development and for production in small amounts since it can operate under the same supply voltage as mask products.

The one-time PROM product is capable of writing only once and is effective for production of many kinds of sets in small quantities and early startup. The EPROM product allows program writing and rewriting, and is therefore suitable for system evaluation. The on-chip RAM has twice the capacity of the  µ PD75316/75P316, enabling large amounts of data to be processed.

经营业务

专营电感、磁珠、滤波器、晶振、热敏电阻、压敏电阻、可调、二极管、三极管、电容、电阻等电子元器件.

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联系人:张伟升
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